Semiconductor device
US7741659B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Nov 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. An isolation structure is formed in a substrate to define a first and a second active region, and a channel active region therebetween. A field implant region is formed below a portion of the isolation structure around the first, second, and channel active regions. A channel active region includes two first sides defining a channel width. The distance from each first side to a second side of a neighboring field implant region is d1. The shortest distance from a third side of each first or second active region to an extension line of each second side of the field implant region is d2. R=d1/d2, where 0.15≦R≦0.85. A gate structure covers the channel active region and extends over a portion of the isolation structure. Source/drain doped regions are formed in the first and the second active regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.