Method of correcting critical dimension in photomask and photomask having corrected critical dimension using the method
US7745072B2 · kind B2 · utility
3Cited by
8References
24Claims
0Family size
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Key dates
| Filing date | Jun 12, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Apr 21, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/72
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.