Resistive memory cell fabrication methods and devices
US7745231B2 · kind B2 · utility
12Cited by
31References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Jun 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom electrode. The shapes of the variable resistance region and the top electrode are configured to evenly distribute a current with a generally hemispherical current density distribution around the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.