Method of making three dimensional NAND memory

US7745265B2 · kind B2 · utility

Assignee

• SanDisk 3D LLC · US

Inventors

• Nima Mokhlesi · Los Gatos, US
• Roy E. Scheuerlein · Cupertino, US

Key dates

• Filing date: Mar 27, 2007
• Grant date: Jun 29, 2010
• Expiry date: Aug 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/00

Abstract

A method of making a monolithic, three dimensional NAND string, includes forming a select transistor, forming a first memory cell over a second memory cell, forming a first word line for the first memory cell, forming a second word line for the second memory cell, forming a bit line, forming a source line, and forming a select gate line for the select transistor. The first and the second word lines are not parallel to the bit line, and the first and the second word lines extend parallel to at least one of the source line and the select gate line.