Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure
US7745309B2 · kind B2 · utility
5Cited by
1References
23Claims
0Family size
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Key dates
| Filing date | Aug 9, 2006 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Oct 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32412
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for promoting interface bonding energy utilized in SOI technology are provided. In one embodiment, the method for promoting interface bonding energy includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate, and bonding the cleaned silicon oxide surface of the first substrate to the cleaned surface of the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.