Tungsten nitride atomic layer deposition processes

US7745329B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Shulin Wang · Campbell, US
• Ulrich Kroemer · Jena, DE
• Lee Luo · Fremont, US
• Aihua Chen · Fremont, US
• Ming Li · Ningbo City, CN

Key dates

• Filing date: Aug 20, 2008
• Grant date: Jun 29, 2010
• Expiry date: Aug 20, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/038
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.