Method for improving process control and film conformality of PECVD film
US7745346B2 · kind B2 · utility
517Cited by
3References
23Claims
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Key dates
| Filing date | Oct 17, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Oct 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields silicon-based dielectric films that are both thin and conformal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.