James S. Sims
23Patents
12h-index
35Co-inventors
77Inventor score
Filing activity: Aug 20, 2004 → Dec 20, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7745346B2 | Method for improving process control and film conformality of PECVD film | Electricity | 517 | Active |
| US9214333B1 | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD | Electricity | 496 | Active |
| US7214630B1 | PMOS transistor with compressive dielectric capping layer | Electricity | 477 | Expired |
| US9865455B1 | Nitride film formed by plasma-enhanced and thermal atomic layer deposition process | Electricity | 401 | Active |
| US10347547B2 | Suppressing interfacial reactions by varying the wafer temperature throughout deposition | Electricity | 383 | Active |
| US9824884B1 | Method for depositing metals free ald silicon nitride films using halide-based precursors | Electricity | 324 | Active |
| US9076646B2 | Plasma enhanced atomic layer deposition with pulsed plasma exposure | Electricity | 75 | Active |
| US7906817B1 | High compressive stress carbon liners for MOS devices | Electricity | 31 | Active |
| US8211510B1 | Cascaded cure approach to fabricate highly tensile silicon nitride films | Electricity | 28 | Active |
| US8512818B1 | Cascaded cure approach to fabricate highly tensile silicon nitride films | Electricity | 20 | Active |
| US9589790B2 | Method of depositing ammonia free and chlorine free conformal silicon nitride film | Chemistry; Metallurgy | 19 | Active |
| US7041543B1 | Strained transistor architecture and method | Electricity | 16 | Expired |
| US7327001B1 | PMOS transistor with compressive dielectric capping layer | Electricity | 10 | Active |
| US7998881B1 | Method for making high stress boron-doped carbon films | Electricity | 8 | Active |
| US9659769B1 | Tensile dielectric films using UV curing | Electricity | 6 | Active |
| US8362571B1 | High compressive stress carbon liners for MOS devices | Electricity | 3 | Active |
| US11239420B2 | Conformal damage-free encapsulation of chalcogenide materials | Electricity | 1 | Active |
| US9315899B2 | Contoured showerhead for improved plasma shaping and control | Electricity | 0 | Active |
| US9598770B2 | Contoured showerhead for improved plasma shaping and control | Electricity | 0 | Active |
| US11832533B2 | Conformal damage-free encapsulation of chalcogenide materials | Electricity | 0 | Active |
| US10020188B2 | Method for depositing ALD films using halide-based precursors | Electricity | 0 | Active |
| US12230495B2 | Method of depositing silicon nitride films | Electricity | 0 | Active |
| US11075127B2 | Suppressing interfacial reactions by varying the wafer temperature throughout deposition | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.