Patent · US Active

Power semiconductor component with a power semiconductor chip and method for producing the same

US7745913B2 · kind B2 · utility

12Cited by

8References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Khalil Hosseini · Weihmichl, DE
Alexander Koenigsberger · Regensburg, DE

Key dates

Filing date	Mar 30, 2007
Grant date	Jun 29, 2010
Priority date	—
Expiry date	Oct 30, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power semiconductor component includes at least one power semiconductor chip and surface-mountable external contacts. The power semiconductor chip includes large-area contact areas on its top side and its rear side, which cover essentially the entire top side and rear side, respectively. The top side also includes, alongside the large-area contact area, a small-area contact area; the areal extent of the small-area contact is at least ten times smaller than the areal extent of the large-area contact areas. The small-area contact area is connected to an individual external contact of the power semiconductor component via a bonding wire connection. The large-area contact area of the top side is connected to external contacts via a bonding tape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.