Two-layer film for next generation damascene barrier application with good oxidation resistance
US7749563B2 · kind B2 · utility
448Cited by
102References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2002 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Jul 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.