Methods for minimizing defects when transferring a semiconductor useful layer
US7749862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2007 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | May 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.