Patent · US Active

Using unstable nitrides to form semiconductor structures

US7749906B2 · kind B2 · utility

2Cited by

0References

17Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Juan E. Dominguez · Portland, US
Adrien LaVoie · Newberg, US
John J. Plombon · Portland, US
Joseph H. Han · San Jose, US
Harsono S. Simka · Saratoga, US

Key dates

Filing date	Feb 22, 2006
Grant date	Jul 6, 2010
Priority date	—
Expiry date	May 8, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/762
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.