System and method for two-dimensional beam scan across a workpiece of an ion implanter
US7750320B2 · kind B2 · utility
4Cited by
21References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2006 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Feb 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be formed substantially consistently on the wafer. Resolving plates move with the beam as the beam is scanned up and/or down. This allows desired ions to impinge on the wafer, but blocks undesirable contaminants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.