Patent · US Active

Phase change material structure and related method

US7750335B2 · kind B2 · utility

13Cited by

0References

11Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Lawrence A. Clevenger · Saratoga Springs, US
Bruce G. Elmegreen · Goldens Bridge, US
Deok-kee Kim · Mount Kisco, US
Chandrasekharan Kothandaraman · New York, US
Lia Krusin-Elbaum · Dobbs Ferry, US
Chung H. Lam · Williston, US
Dennis M. Newns · Yorktown Heights, US

Key dates

Filing date	Aug 16, 2007
Grant date	Jul 6, 2010
Priority date	—
Expiry date	Jan 18, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG11C17/16
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.