Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
US7754012B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 14, 2008 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Apr 14, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.