Process for forming thick oxides on Si or SiC for semiconductor devices
US7754550B2 · kind B2 · utility
5Cited by
10References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 6, 2004 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Jul 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The gate oxide in the trenches of a trench type Schottky device are formed by oxidizing a layer of polysilicon deposited in trenches of a silicon or silicon carbide substrate. A small amount of the substrate is also oxidized to create a good interface between the substrate and the oxide layer which is formed. The corners of the trench are rounded by the initial formation and removal of a sacrificial oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.