Transistor having a channel with biaxial strain induced by silicon/germanium in the gate electrode

US7754555B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Andreas Gehring · Dresden, DE
• Ralf van Bentum · Radebeul, DE
• Markus Lenski · Dresden, DE

Key dates

• Filing date: Feb 14, 2007
• Grant date: Jul 13, 2010
• Expiry date: Nov 15, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/015

Abstract

By forming a stressed semiconductor material in a gate electrode, a biaxial tensile strain may be induced in the channel region, thereby significantly increasing the charge carrier mobility. This concept may be advantageously combined with additional strain-inducing sources, such as embedded strained semiconductor materials in the drain and source regions, thereby providing the potential for enhancing transistor performance without contributing to process complexity.