Method for fabricating capacitor
US7754577B2 · kind B2 · utility
3Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2006 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Jan 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.