Chemical mechanical polishing process
US7754611B2 · kind B2 · utility
11Cited by
4References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2006 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Jul 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.