Ion implantation apparatus and method of converging/shaping ion beam used therefor
US7755067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2008 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Dec 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30477
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.