Patent · US Active

Semiconductor component configured as a diaphragm sensor

US7755152B2 · kind B2 · utility

0Cited by

4References

25Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Hubert Benzel · Neckartenzlingen, DE
Frank Schaefer · Lörrach, DE
Simon Armbruster · Wannweil, DE
Gerhard Lammel · Lörrach, DE
Christoph Schelling · Stuttgart, DE
Joerg Brasas · Neckartenzlingen, DE

Key dates

Filing date	Jun 24, 2009
Grant date	Jul 13, 2010
Priority date	—
Expiry date	Jun 24, 2029

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0115
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.