Structure and method for a magnetic memory device with proximity writing
US7755153B2 · kind B2 · utility
9Cited by
16References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2006 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Feb 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
Abstract
An MRAM device comprises a plurality of MRAM structures, each MRAM structure comprising a magnetoresistive memory cell in close proximity to a high permeability conductive line and a single transistor configured to access the magnetoresistive memory cell for both read and write operations. The high permeability conductive line acts a current path for both read and write operations, thereby reducing the number of metal bit lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.