Dual top gas feed through distributor for high density plasma chamber
US7758698B2 · kind B2 · utility
427Cited by
38References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2006 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Feb 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.