Methods of forming semiconductor devices using embedded L-shape spacers
US7759206B2 · kind B2 · utility
116Cited by
38References
9Claims
0Family size
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Key dates
| Filing date | Nov 29, 2005 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Dec 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/015
Abstract
A method of forming a semiconductor device that embeds an L-shaped spacer is provided. The method includes defining an L-shaped spacer on each side of a gate region of a substrate and embedding the L-shaped spacers in an oxide layer so that the oxide layer extends over a portion of the substrate a predetermined distance from a lateral edge of the L-shaped spacer. And removing oxide layers to expose the L-shape spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.