Fabrication method of semiconductor integrated circuit device
US7759224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jan 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.