III-nitride enhancement mode devices
US7759699B2 · kind B2 · utility
27Cited by
5References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 6, 2006 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Sep 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A III-nitride power semiconductor device that includes a nitrogen polar active heterojunction having a two-dimensional electron gas and including a first III-nitride semiconductor body by one band gap and a second III-nitride body having another band gap over the first III-nitride semiconductor body, a gate arrangement, a gate barrier under the gate arrangement thereof, a first power electrode and a second power electrode, and a method for fabricating the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.