Magnetoresistance element employing Heusler alloy as magnetic layer
US7760473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jan 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/1936
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An advantage of the application is to provide a magnetoresistance element capable of increasing a plateau magnetic field Hp1 while maintaining high ΔRA. A magnetic layer 4c1 adjacent to a non-magnetic material layer 5 in a second fixed magnetic layer 4c constituting the fixed magnetic layer 4 is formed of a first Heusler-alloy layer represented by Co2x(Mn(1-z)Fez)xαy (where the element α is any one element of 3B group, 4B group, and 5B group, x and y all are in the unit of at %, 3x+y=100 at %). Additionally, the content y is in the range of 20 to 30 at % and a Fe ratio z in MnFe is in the range of 0.2 to 0.8. Accordingly, the plateau magnetic field Hp1 may increase while maintaining high ΔRA.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.