Patent · US Active

Dielectric barrier for nanocrystals

US7763511B2 · kind B2 · utility

4Cited by

25References

21Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Prashant Majhi · San Jose, US
Kyu S. Min · San Jose, US
Wilman Tsai · Saratoga, US

Key dates

Filing date	Dec 29, 2006
Grant date	Jul 27, 2010
Priority date	—
Expiry date	Jan 20, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/685
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Electronic apparatus, systems, and methods of forming such electronic apparatus and systems include non-insulating nanocrystals disposed on a dielectric stack, where the non-insulating nanocrystals are arranged to store electric charge. The dielectric stack includes two dielectric layers having different electron barriers such that the non-insulating nanocrystals may be disposed on the dielectric layer having the lower electron barrier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.