Resin molded semiconductor device and differential amplifier circuit
US7763966B2 · kind B2 · utility
0Cited by
12References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2008 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Apr 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of inner leads 14 are provided around a die pad 13. A grounded GND lead 16 is provided in a region between the die pad 13 and the plurality of inner leads 14. A semiconductor chip 17 and the plurality of inner leads 14 are connected to each other by a plurality of wires 21. The semiconductor chip 17 and the GND lead 16 are connected to each other by GND wires 22. The GND wires 22 are disposed between a plurality of wires 21. The distance between ends of each adjacent pair of the inner leads 14 is 0.2 mm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.