Two terminal nonvolatile memory using gate controlled diode elements
US7764534B2 · kind B2 · utility
26Cited by
17References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2007 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Jan 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory cell includes a gate controlled diode steering element and a resistivity switching element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.