Capacitive coupling plasma processing apparatus
US7767055B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 2, 2005 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Oct 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.