Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate
US7767502B2 · kind B2 · utility
7Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2007 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Dec 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.