Structure and method for improving shielded gate field effect transistors
US7768064B2 · kind B2 · utility
22Cited by
18References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2007 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Feb 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/141
Abstract
A field effect transistor is disclosed. In one embodiment, the field effect transistor includes a trench extending into a drift region of the field effect transistor. A shield electrode in a lower portion of the trench is insulated from the drift region by a shield dielectric. A gate electrode in the trench over the shield electrode is insulated from the shield electrode by an inter-electrode dielectric. A source region is formed adjacent the trench. A resistive element is coupled to the shield electrode and to a source region in the field effective transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.