Method of multi-location ARC sensing with adaptive threshold comparison
US7768269B2 · kind B2 · utility
35Cited by
11References
16Claims
0Family size
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Key dates
| Filing date | Aug 15, 2007 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Jun 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32174
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of responding to voltage or current transients during processing of a wafer in a plasma reactor at each of plural RF power applicators and at the wafer support surface. For each process step and for each of the power applicators and the wafer support surface, the method includes determining an arc detection threshold lying above a noise level. The method further includes comparing each transient with the threshold determined for the corresponding power applicator or wafer support surface, and issuing an arc detect flag if the transient exceeds the threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.