Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation
US7768821B2 · kind B2 · utility
3Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2008 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Jan 28, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/17
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present application relates to a non-volatile random-access memory cell equipped with a suspended mobile gate and with piezoelectric means for operating the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.