Plasma processing apparatus and plasma processing method
US7771607B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 4, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jun 9, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.