Forming semiconductor fins using a sacrificial fin
US7772048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Feb 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A semiconductor device is made by steps of removing portions of a first capping layer, removing portions of a sacrificial layer, recessing sidewalls, and forming fin structures. The step of removing portions of the first capping layer forms a first capping structure that covers portions of the sacrificial layer. The step of removing portions of the sacrificial layer removes portions of the sacrificial layer that are not covered by the first capping structure to define an intermediate structure. The step of recessing the sidewalls recesses sidewalls of the intermediate structure relative to edge regions of the first capping structure to form a sacrificial structure having recessed sidewalls. The step of forming fin structures forms fin structures adjacent to the recessed sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.