Method of forming conformal silicon layer for recessed source-drain

US7772074B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Zhiyuan Ye · San Jose, US
• Andrew Lam · San Francisco, US
• Saurabh Chopra · Sunnyvale, US
• Yihwan Kim · San Jose, US

Key dates

• Filing date: Oct 18, 2007
• Grant date: Aug 10, 2010
• Expiry date: Jun 23, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Processes for non-selectively forming one or more conformal silicon-containing epitaxial layers on recess corners are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of a non-selective epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source such as silane and a higher order silane, followed by heating the substrate to promote solid phase epitaxial growth.