Semiconductor device and method of forming high-frequency circuit structure and method thereof
US7772081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2008 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jan 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the first metal layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the resistive and dielectric layers. The first metal layer and the resistive layer are electrically connected to form a resistor and the first metal layer forms a first inductor. A wafer supporter is mounted over the IPD using an adhesive material and a third metal layer is deposited over the IPD. The third metal layer forms a second inductor that is electrically connected to the capacitor and the resistor by the TSVs of the IPD. An interconnect structure is connected to the IPD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.