Formation of SOI by oxidation of silicon with engineered porosity gradient
US7772096B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2008 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jul 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for making a silicon-on-insulator substrate. Such method can include epitaxially growing a highly p-type doped silicon-containing layer onto a major surface of an underlying semiconductor region of a substrate. Subsequently, a non-highly p-type doped silicon-containing layer may be epitaxially grown onto a major surface of the p-type highly-doped epitaxial layer to cover the highly p-type doped epitaxial layer. The overlying non-highly p-type doped epitaxial layer can have a dopant concentration substantially lower than the dopant concentration of the highly p-type doped epitaxial layer. The substrate can then be processed to form a buried oxide layer selectively by oxidizing at least portions of the highly p-type doped epitaxial layer covered by the non-highly p-type doped epitaxial layer, the buried oxide layer separating the overlying monocrystalline semiconductor layer from the underlying semiconductor region. Such processing can be performed while simultaneously annealing the non-highly p-type doped epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.