Method for improving uniformity and adhesion of low resistivity tungsten film
US7772114B2 · kind B2 · utility
74Cited by
48References
15Claims
0Family size
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Key dates
| Filing date | Dec 5, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Feb 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32051
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.