Feng Chen
12Patents
10h-index
19Co-inventors
65Inventor score
Filing activity: Feb 17, 2006 → Jan 6, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7772114B2 | Method for improving uniformity and adhesion of low resistivity tungsten film | Electricity | 74 | Active |
| US8058170B2 | Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics | Electricity | 71 | Active |
| US8551885B2 | Method for reducing tungsten roughness and improving reflectivity | Electricity | 65 | Active |
| US8975184B2 | Methods of improving tungsten contact resistance in small critical dimension features | Electricity | 38 | Active |
| US8853080B2 | Method for depositing tungsten film with low roughness and low resistivity | Electricity | 37 | Active |
| US8623733B2 | Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects | Electricity | 35 | Active |
| US9236297B2 | Low tempature tungsten film deposition for small critical dimension contacts and interconnects | Electricity | 33 | Active |
| US8329576B2 | Method for improving uniformity and adhesion of low resistivity tungsten film | Electricity | 31 | Active |
| US8409987B2 | Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics | Electricity | 30 | Active |
| US9034760B2 | Methods of forming tensile tungsten films and compressive tungsten films | Electricity | 23 | Active |
| US9673146B2 | Low temperature tungsten film deposition for small critical dimension contacts and interconnects | Electricity | 10 | Active |
| US7611969B2 | Generation and applications of negative dielectric constant materials | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.