Patent · US Active

Through substrate via semiconductor components

US7772123B2 · kind B2 · utility

29Cited by

12References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Uwe Hoeckele · Regensburg, DE
Thomas Kunstmann · Hemau, DE
Uwe Seidel · Munich, DE

Key dates

Filing date	Jun 6, 2008
Grant date	Aug 10, 2010
Priority date	—
Expiry date	Aug 19, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/01079
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming the through substrate via by filling an opening with a first fill material and depositing a first insulating layer over the first fill material, the first insulating layer not being deposited on sidewalls of the fill material in the opening, wherein sidewalls of the first insulating layer form a gap over the opening. The method further includes forming a void by sealing the opening using a second insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.