Method for forming tetragonal zirconium oxide layer and method for fabricating capacitor having the same
US7772132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2006 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Apr 15, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T50/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a zirconium oxide (ZrO2) layer on a substrate in a chamber includes controlling a temperature of the substrate; and repeating a unit cycle of an atomic layer deposition (ALD) method. The unit cycle includes supplying a zirconium (Zr) source into a chamber, parts of the Zr source being adsorbed into a surface of the substrate; purging non-adsorbed parts of the Zr source remaining inside the chamber; supplying a reaction gas for reacting with the adsorbed parts of the Zr source; and purging non-reacted parts of the reaction gas remaining inside the chamber and reaction byproducts, wherein the temperature of the substrate and a concentration of the reaction gas are controlled such that the ZrO2 layer is formed with a tetragonal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.