Strained semiconductor device and method of making same
US7772676B2 · kind B2 · utility
7Cited by
8References
17Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 23, 2006 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Mar 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor body is formed from a first semiconductor material, e.g., silicon. A compound semiconductor region, e.g., silicon germanium, is embedded in the semiconductor body. The compound semiconductor region includes the first semiconductor material and a second semiconductor material. The compound semiconductor region has a concentration of the second semiconductor material that varies along an interface between the side portion of the compound semiconductor region and the side portion of the semiconductor body
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.