Method for forming silicon wells of different crystallographic orientations
US7776679B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 18, 2008 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Jul 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing silicon wells of various crystallographic orientations in a silicon support, including the steps of: forming a silicon layer having a first orientation on a silicon substrate having a second orientation; forming insulating walls, defining wells extend at least down to the border between the silicon substrate and the silicon layer; performing, in first wells, a chemical vapor etch (CVE) of the silicon layer by means of hydrochloric acid, in an epitaxy reactor, at a temperature ranging between 700° C. and 950° C.; and performing, in the first wells, a vapor-phase epitaxy on the silicon substrate in the presence of a precursor of silicon and hydrochloric acid, at a temperature ranging between 700° C. and 900° C. and up to the upper surface of the silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.