Selective formation of silicon carbon epitaxial layer
US7776698B2 · kind B2 · utility
3Cited by
10References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 5, 2007 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Oct 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/751
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.