Semiconductor device and method for forming pattern in the same
US7776747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2007 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Dec 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a fine pattern of a semiconductor device includes forming a first hard mask layer over a semiconductor substrate, forming a second hard mask layer pattern over the first hard mask layer, forming a spacer on a sidewall of the second hard mask layer pattern, selectively etching the first hard mask layer by using the spacer and the second hard mask layer pattern as an etching mask to form a first hard mask layer pattern, forming a first insulating film filling the second hard mask layer pattern and the first hard mask layer pattern, selectively etching the second hard mask layer pattern and the underlying first hard mask layer pattern to form a third hard mask layer pattern, removing the first insulating film and the spacer, and patterning the semiconductor substrate by using the third hard mask layer pattern as an etching mask to form a fine pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.