Silicon-on-insulator structures
US7777275B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 18, 2006 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Nov 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6211
Abstract
Methods which include providing a single crystal silicon substrate having a device pattern formed on a portion of the substrate where the device pattern has a protrusion, forming a protection layer on a portion of the protrusion, and forming an oxide insulation layer between the protrusion and the substrate using a thermal oxidation process; methods of forming a partial SOI structure which include providing a single crystal silicon substrate having a device pattern formed thereon where the device pattern comprises a non-SOI region and an SOI region having a protrusion, forming a protection layer on a portion of the protrusion, and forming an oxide insulation layer between the protrusion and the substrate using a thermal oxidation process; structures formed by such methods; and partial silicon-on-insulator structures comprising a single crystal silicon substrate having an device pattern disposed on a surface thereof where the device pattern includes a non-SOI region and an SOI region having a protrusion, and an oxide insulation layer disposed in the device pattern where a portion of the insulation layer is disposed under the protrusion such that the protrusion is isolated from the s…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.