FinFET transistor and circuit

US7777276B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kerry Bernstein · Underhill, US
• Edward J. Nowak · South Burlington, US
• BethAnn Rainey · South Burlington, US

Key dates

• Filing date: Jan 4, 2008
• Grant date: Aug 17, 2010
• Expiry date: Apr 17, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.